MPSA28 mpsa29 silicon npn darlington transistors description: the central semiconductor MPSA28 and mpsa29 are silicon npn darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. marking: full part number maximum ratings: (t a =25c) symbol MPSA28 mpsa29 units collector-base voltage v cbo 80 100 v collector-emitter voltage v ces 80 100 v emitter-base voltage v ebo 12 v continuous collector current i c 500 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 200 c/w thermal resistance jc 83.3 c/w electrical characteristics: (t a =25c ) MPSA28 mpsa29 symbol test conditions min max min max units i cbo v cb =60v - 100 - - na i cbo v cb =80v - - - 100 na i ces v ce =60v - 500 - - na i ces v ce =80v - - - 500 na i ebo v eb =10v - 100 - 100 na bv cbo i c =100a 80 - 100 - v bv ces i c =100a 80 - 100 - v bv ebo i e =10a 12 - 12 - v v ce(sat) i c =10ma, i b =10a - 1.2 - 1.2 v v ce(sat) i c =100ma, i b =100a - 1.5 - 1.5 v v be(on) v ce =5.0v, i c =100ma - 2.0 - 2.0 v h fe v ce =5.0v, i c =10ma 10,000 - 10,000 - h fe v ce =5.0v, i c =100ma 10,000 - 10,000 - f t v ce =5.0v, i c =10ma, f=100mhz 125 - 125 - mhz c ob v cb =10v, i e =0, f=1.0mhz - 8.0 - 8.0 pf to-92 case r0 (28-may 2013) www.centralsemi.com
MPSA28 mpsa29 silicon npn darlington transistors lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline www.centralsemi.com r0 (28-may 2013)
MPSA28 mpsa29 silicon npn darlington transistors typical electrical characteristics r0 (28-may 2013) www.centralsemi.com
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